CIPS Conference in Nuremberg Infineon´s statement: The Future of Wire Bonding is? (Cu) Wire Bonding
Maximum Junction temperature for switching operation is going to increase. Current assembly and interconnect technologies have to change for module setup that consistently meets reliability requirements at higher temperature and swing in temperature. Cu wire bonding as interconnect for the top side of power semiconductors can overcomes the limits of Al wire bonding. Wire bonds no longer limit lifetime in power cycling. Current capability increases by 70% at constant boundary conditions. Cu wire bonding can also apply to terminal interconnects bringing up its current capabilities.